• No results found

University of Groningen Charge transport and trap states in lead sulfide quantum dot field-effect transistors Nugraha, Mohamad Insan

N/A
N/A
Protected

Academic year: 2021

Share "University of Groningen Charge transport and trap states in lead sulfide quantum dot field-effect transistors Nugraha, Mohamad Insan"

Copied!
3
0
0

Bezig met laden.... (Bekijk nu de volledige tekst)

Hele tekst

(1)

University of Groningen

Charge transport and trap states in lead sulfide quantum dot field-effect transistors

Nugraha, Mohamad Insan

IMPORTANT NOTE: You are advised to consult the publisher's version (publisher's PDF) if you wish to cite from it. Please check the document version below.

Document Version

Publisher's PDF, also known as Version of record

Publication date: 2017

Link to publication in University of Groningen/UMCG research database

Citation for published version (APA):

Nugraha, M. I. (2017). Charge transport and trap states in lead sulfide quantum dot field-effect transistors. University of Groningen.

Copyright

Other than for strictly personal use, it is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license (like Creative Commons).

Take-down policy

If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.

Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum.

(2)

113

List of Publications

1. Daniel M. Balazs, Mohamad Insan Nugraha, Satria Zulkarnaen Bisri, Mykhailo Sytnyk, Wolfgang Heiss, Maria Antonietta Loi, Reducing charge trapping in PbS colloidal quantum dot solids, Appl. Phys. Lett. 2014, 104, 112104.

2. Mohamad Insan Nugraha, Roger Hausermann, Satria Zulkarnaen Bisri, Hiroyuki Matsui, Mykhailo Sytnyk, Wolgang Heiss, Jun Takeya, Maria Antonietta Loi, High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal Field-Effect Transistors, Adv. Mater. 2015, 27, 2107-2112.

3. Mohamad Insan Nugraha, Hiroyuki Matsui, Satria Zulkarnaen Bisri, Mykhailo Sytnyk, Wolgang Heiss, Maria Antonietta Loi, Jun Takeya, Tunable Doping in PbS Nanocrystal Field-Effect Transistors using Surface Molecular Dipole, APL Materials, 2016, 4, 116105.

4. Mohamad Insan Nugraha, Hiroyuki Matsui, Roger Hausermann, Shun Watanabe, Takayoshi Kubo, Satria Zulkarnaen Bisri, Mykhailo Sytnyk, Wolgang Heiss, Maria Antonietta Loi, Jun Takeya, Strain-Modulated Charge Transport in Flexible PbS Nanocrystal Field-Effect Transistors, Adv. Electron. Mater. 2017, 3, 1600360.

5. Jeng-Ting Li, Li-Chih Liu, Jen-Sue Chen, Jiann-Shing Jeng, Po-Yung Liao, Hsiao-Cheng Chiang, Ting-Chang Chang, Mohamad Insan Nugraha, Maria Antonietta Loi, Localized tail state distribution and hopping transport in ultrathin zinc-tin-oxide thin film transistor, Appl. Phys. Lett. 2017, 110, 023504.

6. Mohamad Insan Nugraha, Roger Hausermann, Hiroyuki Matsui, Shun Watanabe, Mykhailo Sytnyk, Wolgang Heiss, Maria Antonietta Loi, Jun Takeya, Broadening of the Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics, ACS Appl. Mater. Interfaces 2017, 9, 4719.

7. Mohamad Insan Nugraha, Shohei Kumagai, Shun Watanabe, Mykhailo Sytnyk, Wolfgang Heiss, Maria Antonietta Loi, Jun Takeya, Enabling ambipolar to heavy n-type transport in PbS quantum dot solids through doping with organic molecules, ACS Appl. Mater. Interfaces 2017, Article ASAP.

(3)

Referenties

GERELATEERDE DOCUMENTEN

Charge transport and trap states in lead sulfide quantum dot field-effect transistors Nugraha, Mohamad Insan.. IMPORTANT NOTE: You are advised to consult the publisher's

Our focus is to understand how the properties of the semiconductor and/or insulator interfaces and the introduction of dopant molecules on the semiconductor films can

The threshold voltage of the devices was found to have a linear relationship with the SAM doping concentration, allowing tuning the electrical characteristics of PbS

The passivation of the gate dielectric surface through the use of self-assembled monolayers (SAMs) results in a significant improvement of electron mobility due to reduced

Furthermore, the increase of carrier traps and the mobility characteristics in the devices with the high-k dielectrics are an indication of the existence of polaronic- related

De transistoren laten ook responsiviteit op nabij-infrarood licht zien, wat aantoont dat loodsulfide CQDs gebruikt kunnen worden als materiaal in

Thank you for guiding me during this time, giving me some unique kind of restricted ‘freedom to operate’, thus allowing me being creative and work on topics that I really

Oral presentation: “An all-solution-based high-gain hybrid CMOS-like quantum dot/carbon nanotube inverter”. Oral presentation: “An all-solution-based hybrid quantum