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High capacity mode group division multiplexed multimode fiber

systems

Citation for published version (APA):

Koonen, A. M. J., Chen, H., Boom, van den, H. P. A., & Tangdiongga, E. (2011). High capacity mode group division multiplexed multimode fiber systems. In Proceedings of the 16th Opto-Electronics and Communications Conference 2011 (OECC 2011), 4-8 July 2011, Kaohsiung, Taiwan (pp. 826-827). Institute of Electrical and Electronics Engineers.

Document status and date: Published: 01/01/2011 Document Version:

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Recent Advances in Photonic Integrated Circuits for

Optical Fiber Communications

Y. K. Chen

Bell Laboratories, Alcatel-Lucent, 600 Mountain Avenue, New Jersey, U.S.A (E-mail: young-kai.chen@alcatel-lucent.com )

Abstract: In this talk, we will review recent advances in the semiconductor photonic components, photonic integrated circuits and the integration methodologies implemented on the traditional compound semiconductor as well as the emerging silicon-based platform.

Keywords: High speed photonic components, photonic integrated circuits, optic fiber communication.

Recent proliferations of smart phones and multimedia network appliances have escalated the traffic of speedily delivery of multimedia contents from the remote data centers to the end users through the broadband optic fiber infrastructures. The user friendly applications in smart phones and low cost network appliances such as tablet computers allow the users to access and enjoy multimedia information ubiquitously. To deliver these content-rich data from the remote data centers to the end users, the capacity and speed of the optic fiber infrastructure and access nodes have increased 100x over the past decade, as exemplified by the data traffic in the North American region in Figure 1.

Semiconductor optoelectronic devices have intrinsic physical broadband properties as well as low cost scalable integration technology to meet and even fuel the bandwidth demand and make the optic fiber infrastructure as the facto backbone of the internet expansion. This can be seen in the 15% year-to-year increase in the global optical market in wide-area network (WAN), data communication (Datacom) and fiber access (Access), as shown in Figure 2.

Table 1 lists several examples of high speed optoelectronic devices. It is clear that these components are able to generate and detect modulated optical signals up to 40GBaud. With the advances in the CMOS fabrication technologies, the performance and the integration scale of both the compound semiconductor and silicon-based photonic devices and photonic integrated circuits have made remarkable advances in the past fewyears. In this talk, we will review recent advances in the high speed semiconductor optoelectronic devices and photonic integrated circuits implemented on traditional IIV-V

compound semiconductors as well as the emerging silicon-based photonic devices.

Figure 1. Projection of data traffic in North America

(Tkach, Bell Labs Tech Journal, vol 14, 2010)

$-$2,000 $4,000 $6,000 $8,000 $10,000 $12,000 2008 2009 2010 2011 2012 2013 2014 2015 R ev en ue ($ U S D b illi on s)

WAN Datacom Access

Figure 2 Global Optical Component Market Forecast (Courtesy of Ovum 2011)

Function Channel Speed (Gbps) Size (um**2) Density (per cm**2)

VCSEL 35 100 1,000,000 Photodiodes 310 200 500,000 DFB 25 2500 40,000 EML 80 10000 10,000 Si MZM 40 1000 100,000 InP MZM 80 50000 2,000 Si Ring Mod 32 500 200,000 InP AWG+EML 40 50,000,000 2 InP AWG+PD 40 20,000,000 5 Si AWG+Mod 40 20,000,000 5 Si AWG+PD 40 20,000,000 5

Table 1 Examples of high performance integrated semiconductor photonic devices

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