University of Groningen
Photophysics of nanomaterials for opto-electronic applications
Kahmann, Simon
IMPORTANT NOTE: You are advised to consult the publisher's version (publisher's PDF) if you wish to cite from
it. Please check the document version below.
Document Version
Publisher's PDF, also known as Version of record
Publication date:
2018
Link to publication in University of Groningen/UMCG research database
Citation for published version (APA):
Kahmann, S. (2018). Photophysics of nanomaterials for opto-electronic applications. Rijksuniversiteit
Groningen.
Copyright
Other than for strictly personal use, it is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license (like Creative Commons).
Take-down policy
If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.
Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum.
Symbols and Abbreviations
α . . . absorption coefficient β . . . couplig strength
Γ . . . origin in reciprocal lattice; also tunnelling probability
γr . . . inverse localisation radius in the Miller-Abrahams model
δi p . . . in-plande deformation mode
²0 . . . vacuum permittivity
²h . . . permittivity of a host
²r . . . relative permittivity
²p . . . permittivity of a particle
λ . . . reorganisation energy in the Marcus theory; also wavelength µ∞ . . . mobility in the limit of infinite temperature
µGD M . . . charge carrier mobility in the Gaussian disorder model
ν0 . . . maximum hopping rate
νa . . . asymmetric stretch mode
νM ar cus
i j . . . hopping frequency according to the Marcus theory
νMi l l er
i j . . . hopping frequency according to the Miller-Abrahams model
νf . . . final vibrational wavefunction
νi . . . initial vibrational wavefunction
νi j . . . hopping frequency
νs . . . symmetric stretch mode
π-bond . . . covalent bond with highest electron density in the plane above and
under-neath the participating atoms Σ . . . energetic disorder
σ-bond . . . covalent bond with highest electron density between the participating atoms σi , j . . . absorption crosss section for transition from state i to state j
τav . . . average PL lifetime
τD . . . PL lifetime of neat donor
τD A . . . PL lifetime of the donor in blend with the acceptor
τi . . . PL lifetime component i
φi . . . wavefunction of an atomic orbital
ΨMO . . . wavefunction of a molecular orbital
~a . . . graphene direct lattice vector
SYMB OL S AND AB BR
a0 . . . lattice constant of graphene
aCC . . . distance between carbon atoms in graphene
~
C . . . translational vector for the construction of CNTs dt . . . tube diameter
e . . . elementary charge Ebi nX . . . exciton binding energy
Ebul k . . . bulk band gap
EC . . . Coulomb energy
Econ f . . . confinement energy
EC T . . . charge transfer state energy
EF . . . Fermi energy
EF R . . . energy of a Fano resonance
Eg . . . band gap energy
EQDg . . . quantum dot band gap
Eg as . . . band gap in gas phase
Ei j . . . energy separation between site i and site j
Eop t . . . optical energy gap
Et r ans . . . transport energy gap
F . . . electric field F F . . . fill factor
h . . . Planck’s constant
ħ . . . reduced Planck’s constant
Ii j . . . overlap integral in Marcus theory
JSC . . . short circuit current density
~
k∥ . . . k-vector parallel to the CNT tube axis ~
k⊥ . . . k-vector perpendicular to the CNT tube axis
LD . . . diffusion length
m∗ . . . exciton reduced mass
me . . . free electron mass
m∗e . . . effective electron mass
m∗
h . . . effective hole mass
Mi j . . . van Hove transition in metallic CNTs
Mn . . . number average molar mass
Mw . . . mass average molar mass
Nt . . . density of hopping sites in the Gaussian disorder model
P+ . . . polarisation energy of a positive charge carrier
P− . . . polarisation energy of a negative charge carrier
q . . . Fano shape parameter
R0 . . . nuclear coordinate of an excited state
Simon Kahmann 142 P HO T OP H YS IC S OF NAN OM A TE R IALS F OR OPT O-EL ECTR ON IC
rB . . . Bohr radius
rC . . . Coulomb radius
ri j . . . distance between site i and site j
S0 . . . ground state
S1 . . . first singlet excited state
Si j . . . van Hove transition in semiconducting CNTs
Sn . . . n-th singlet excited state
T1 . . . first triplet excited state
Tn . . . n-th triplet excited state
VOC . . . open circuit voltage
2D-PL . . . two-dimensional photoluminescence AFM . . . atomic force microscopy
AL . . . . absorption layer AO . . . atomic orbital BDT . . . 1,4-benzenedithiol BTD . . . 2,1,3-benzothidiazole CB . . . conduction band
CELIV . . . charge extraction by linear increase of voltage CNT . . . carbon nanotube
CQD . . . colloidal quantum dot CTS . . . . charge transfer state D-A . . . . donor-acceptor
D-mode . . . Raman defect mode of CNTs DFT . . . density functional
DGU . . . density gradient ultracentrifugation DOS . . . density of states
DPP . . . diketopyrrolopyrrole
DPP-TT-T . . . . . diketopyrrolopyrrole-thieno[3,2-bi]thiophene EA . . . electron affinity
EDT . . . 1,2-ethanedithiol EQD . . . epitaxial quantum dot
ES-VRH . . . Efros-Shklovskii variable range hopping FET . . . . filed effect transistor
FFT . . . . fast Fourier transformation
FRET . . . . fluorescence resonance energy transfer FT . . . . Fourier transformation
FTIR . . . Fourier transform infrared FWHM . . . . full width at half maximum
SYMB OL S AND AB BR
GDM . . . . Gaussian disorder model GSB . . . . ground state bleach H . . . HOMO orbital
H-i . . . i-th orbital below the HOMO level HMDT . . . . Bis(trimethylsilyl)amine
HiPCO . . . . high pressure carbon monoxide fabricated CNTs HOMO . . . . highest occupied molecular orbital
HRTEM . . . high resolution transmission electron microscopy
HRSTEM . . . . high resolution scanning transmission electron microscopy ILS . . . instrument response function
IP . . . . ionisation potential IR . . . . infrared
IRAV . . . infrared active vibration ISC . . . . intersystem crossing ITO . . . . indium tin oxide
KPFM . . . Kelvin probe force microscopy LUMO . . . lowest unoccupied molecular orbital L . . . LUMO orbital
L+i . . . i-th orbital above the LUMO level
MDMO-PPV . . . . poly[2-methoxy-5-(3’,7’-dimethyloctyloxy)-1,4-phenylenevinylene] MeCN . . . acetonitrile
MEG . . . multiple exciton generation
MEH-PPV . . . . . poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylvene] MeOH . . . methanol
MIR . . . . mid infrared MO . . . . molecular orbital MoOx . . . molybdenum oxide
MPA . . . 1,3-mercaptopropionic acid MWCNT . . . . multi walled carbon nanotube
N2200 . . . poly[N,N’-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)
NC . . . nanocrystal NIR . . . . near infrared
NNH . . . nearest neighbour hopping NP . . . nanoparticle
OA . . . oleic acid OAm . . . oleylamine
OLED . . . organic light emitting diode OPV . . . organic photovoltaics
Simon Kahmann 144 P HO T OP H YS IC S OF NAN OM A TE R IALS F OR OPT O-EL ECTR ON IC
P3HT . . . . poly-(3-hexylthiophene)
PA . . . . poly-acetylene; also photoabsorption PC . . . poly-carbozole
PCBM . . . phenyl-C61-butyric acid methyl ester
PCE . . . . power conversion efficiency
PCDTBT . . . . poly[N-9’-heptadecanyl-2,7-carbazole-alt-5,5-(4’,7’-di-2-thienyl-2,1,3-ben-zothiadiazole)] poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophene-diyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophene-diyl]
PCPDTBT . . . . . poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta [2,1-b;3,4-b’]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)]
PIA . . . . photoinduced absorption PF . . . . polyfuran PF12 . . . . poly(9,9-didodecylfluorene-2,7-diyl PFO . . . poly(9,9-octyllfluorene-2,7-diyl PL . . . . photoluminescence PP . . . poly-phenylene PPV . . . . poly-phenylenevinylene PSBTBT . . . poly[(4,4’-bis(2-ethylhexyl)dithieno[3,2-b:2’,3’-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl] PT . . . polythiophene PTB7 . . . . poly(4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b’]dithiophene-2,6-diyl]-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl) PTB7-th . . . . poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b’]dithiophene- 2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxy-late-2-6-diyl)] QD . . . quantum dot
QDSC . . . quantum dot solar cell QW . . . . quantum well
QWR . . . quantum wire QY . . . quantum yield
RBM . . . radial breathing mode of CNTs SAD . . . . selected area diffraction SC . . . semiconductor
Si-PCPDTBT . . . . poly[(4,4’-bis(2-ethylhexyl)dithieno[3,2-b:2’,3’-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl]
SSH . . . . Su-Schriffer-Heeger
STS . . . . scanning tunnelling microscopy SWCNT . . . single walled cabon nanotube
SYMB OL S AND AB BR
TA . . . . transient absorption
TBAI . . . tetrabutylammonium iodide TRPL . . . . time resolved photolomunescence UDFT . . . unrestricted DFT
UDFT-BS . . . unrestricted broken symmetry DFT UV . . . ultraviolet
VB . . . valence band VHS . . . van Hove singularity VRH . . . variable range hopping
Simon Kahmann 146 P HO T OP H YS IC S OF NAN OM A TE R IALS F OR OPT O-EL ECTR ON IC