University of Groningen Spin transport in graphene - hexagonal boron nitride van der Waals heterostructures Gurram, Mallikarjuna

v)time-resolved Faraday rotation experiments for measuring spin polarization of a semiconductor interfaced with a ferromagnet [43], and vi)spin valve and Hanle spin

In this chapter I briefly discuss the basic electronic properties of the materials used in this thesis: graphene, hexagonal boron nitride, and their heterostructures.. A brief

Four terminal non-local measurement: Spin valve and Hanle signals For spin trans- port characterization, we use a four-terminal non-local geometry. Here, a current is passed between

Further, even with the multiple electrodes in-between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over

In order to explore the potential of hBN tunnel barriers for graphene spin valve devices, one can study the role of current/voltage bias for spin-injection and detection

We study room-temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron

Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent

In a three-terminal Hanle geometry (Fig. A.1), a single magnetic tunnel contact is used for electrical injection and detection of the non-equilibrium spin accumulation underneath