• No results found

University of Groningen Magnetotransport of Ising superconductors Zheliuk, Oleksandr

N/A
N/A
Protected

Academic year: 2021

Share "University of Groningen Magnetotransport of Ising superconductors Zheliuk, Oleksandr"

Copied!
2
0
0

Bezig met laden.... (Bekijk nu de volledige tekst)

Hele tekst

(1)

University of Groningen

Magnetotransport of Ising superconductors Zheliuk, Oleksandr

DOI:

10.33612/diss.113195218

IMPORTANT NOTE: You are advised to consult the publisher's version (publisher's PDF) if you wish to cite from it. Please check the document version below.

Document Version

Publisher's PDF, also known as Version of record

Publication date: 2020

Link to publication in University of Groningen/UMCG research database

Citation for published version (APA):

Zheliuk, O. (2020). Magnetotransport of Ising superconductors. University of Groningen. https://doi.org/10.33612/diss.113195218

Copyright

Other than for strictly personal use, it is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license (like Creative Commons).

Take-down policy

If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.

Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum.

(2)

114

List of publications

1. O. Zheliuk, J. M. Lu, Q. H. Chen, M. Liang, P. Wan, X. Peng, J. Yang, T. Mutter, A. Dongelmans & J. T. Ye,

Proximity effect and carrier redistribution in few-layer WS2. (in preparation)

2. O. Zheliuk, J. M. Lu, Q. H. Chen, A. A. El Yumin, S. Golightly & J. T. Ye,

Josephson coupled Ising pairing induced in suspended MoS2 bilayers by double side ionic gating.

Nature Nanotechnology 14, 1123–1128 (2019).

3. Q. H. Chen, J. M. Lu, L. Liang, O. Zheliuk, A. A. El Yumin & J.T. Ye, Continuous low-bias switching of superconductivity in MoS2 transistor.

Advanced Materials 30 (28), 1800399 (2018);

4. J. M. Lu. O. Zheliuk, Q. H. Chen, I. Leermakers, N. E. Hussey, U. Zeitler & J. T. Ye, Full superconducting dome of strong Ising protection in gated monolayer WS2.

Proceedings of the National Academy of Sciences 115, 3551–3556 (2018); 5. A. A. El Yumin, J. Yang, Q. H. Chen, O. Zheliuk, J. T. Ye,

Planar p-n junction based on a TMDs/boron nitride heterostructure. Physica status solidi (b) 254 (11), 1700180 (2017);

6. Q. H. Chen, L. Liang, A. A. El Yumin, J. M. Lu, O. Zheliuk & J. T. Ye,

High-quality superconductor-normal metal junction made on the surface of MoS2 flakes. Physica status solidi (b) 254 (11), 1700181 (2017);

7. Q. H. Chen, J. M. Lu, L. Liang, O. Zheliuk, A. A. El Yumin, P. Sheng & J.T. Ye, Inducing and manipulating heteroelectronic states in single MoS2 thin flake.

Physical review letters 119 (14), 147002 (2017);

8. J. Yang, P. Gordiichuk, O. Zheliuk, J. M. Lu, A. Herrmann & J. T. Ye,

Role of Defects in tuning the electronic properties of monolayer WS2 grown by chemical vapour deposition.

Physica Status Solidi RRL 11 (10), 1700302 (2017); 9. O. Zheliuk, J. M. Lu, J. Yang & J. T. Ye,

Monolayer superconductivity in WS2.

Physica Status Solidi RRL 11 (9), 1700245 (2017);

10. J. M. Lu, O. Zheliuk, I. Leermakers, N. F. Q. Yuan, K. T. Law & J. T. Ye, Evidence for two-dimensional Ising superconductivity in gated MoS2.

Referenties

GERELATEERDE DOCUMENTEN

Samen met Jacques van de Ven (is er in Amsterdam ooit iets gebeurd wat jee niet weet?) gaf Willem mij de ruimte mijn eigen weg te vinden, ruimte waarin ik al diee tijd blij

vilified and segregation progressed further, but following a long separation between biological and geological sciences, awareness is now rising that geological processes related

Demonstrated in Figure 1 , the two isobaric metabolites, while separable by HPLC (panel I), are unidenti fiable on the basis of their MS/MS product ion spectra showing identical

The work described in this thesis was performed in the research group “Device physics of Complex Materials” of the Zernike Institute for Advanced Materials at the University

This, intrinsically semiconducting material with 1.1 eV bandgap in its monolayer limit makes it a promising candidate for 2D memory type devices [51] and enables a versatile

through coupling between an external magnetic field and the spins of Cooper pairs formed near

Throughout this step, the ionic gate voltage is always zero, and the different electronic states are accessed by either thermal release or solid-state back

demonstrate that increasing layer number and tuning carrier distribution in a dual- gate configuration results in variable dimensionless resistance of Superconductor- Normal Metal