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A.C. Impedance of Faradaic Reactions Involving Electrosorbed Intermediates, Part 1: Kinetic Theory

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Harrington, D.A. & Conway, B.E. (1987). ac Impedance of Faradaic reactions involving electrosorbed intermediates—I. Kinetic theory. Electrochimica Acta, 32(12), 1703-1712. https://doi.org/10.1016/0013-4686(87)80005-1

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This is a post-review version of the following article:

ac Impedance of Faradaic reactions involving electrosorbed intermediates—I. Kinetic theory

D.A. Harrington, B.E. Conway December 1987

The final published version of this article can be found at:

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A.C. IMPEDANCE OF FARADAIC REACTIONS INVOLVING ELECTROSORBED INTERMEDIATES; Part I: Kinetic Theory

*

D.A. Harrington and B.E. Conway

Chemistry Department, University of Ottawa, 365 Nicnolas Street, Ottawa, Ontario KlN 9B4,

Canada (Received:

Abstract

The evaluation of the electrochemical adsorption behaviour of chemisorbed intermediates generated in a multi-step Faradaic reaction at appreciaole net currents is important for understanding tn.e reaction mechanism of the overall process involved. Measurement of a.c. impedance of the reaction at controlled potentials provides an important experimental route to the required information about the 11overpotential-deposited11 ad-atom species. Interpretation of the

measurements requires, however, further examination.

Based on an extension of Armstrong's treatment� it is shown tbat inter­ pretation of a.c. impedance measurements directly in terms of the components of an intuitively assumed equivalent circuit is rarely correct; only in the case of underpotential-deposition of an ad-species, where no continuous Faradaic currents pass, is s-uch an approach satisfactory. Kinetic analysis is given for the behaviour of a multistep process with examples from the cathodic H2 evolution reaction where electrochemical and H-recombination desorption

path.ways are involved. Tfl.e kinetic analysis enables the steady-state adsorption pseudocapacitance C for H to be evaluated as� function of overpotential. Its

behaviour is clearli distinguishable_ from the quantity C0 commonly written as the pseudocapacitance element in the equivalent circuit ror this type of reaction.

*

Present address: Surface Science Group, Chemistry Department,

University of Western Ontario, London, Ont., Canada. Accepted version of Electrochim. Acta, 32 (1987) 1703-1712. doi: 10.1016/0013-4686(87)80005-1

© 1987. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licences/by-nc-nd/4.0/

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-kinetic theory for the two-step case.2 Although theoretical treatments have been given for generalized m�clianisms, of which this is a specific case, 3 the consequences for t�ts case and th� �erivation of equivalent circuits have not been pursued. After deriving acceptable equivalent circuits, the physical

signi'ficance of tlie constttuent resistors, capacitors and inductors is discussed, We also examine the concept of adsorptton pseudocapacitance and its relationship to the equivalent circuit elements, and introduce a useful new quantity, the a.c. pseudocapacttance. While some of tlie points presented here have been indicated previously in the literature, as cited, it is useful to mention them again as

part of an integrated di'scussi'on of the a.c. method for study of surface reactions. A mechanism was chosen in wEricli a single el ectrosorbed 'intermediate is

formed, as in the hydrogen evolution reaction (h.e.r.}. In the paper wnicn follows4, an experimental a.c. impedance study of tlie b .. e.r. at platinum elec­ trodes is descrH>ed and analysed using tlie methods given here. We therefore apply the tlieory to the mechanism of the h.e.r., considering the reaction steps of proton discflarge witfl electrosorptfon (Volmer reaction, eqn.

Cl ll,

electro­ chemi. cal desorption (Floriuti reaction, eqn. (211 and H recomBina tion (Tafel reaction, eqn. ())). The recombination reaction is an important component of the h.e.r. at Pt, But doe.s not seem to nave been incorporated into previous impedance analyses, except those of Geriscfier and Mehl5 and Brug et a16.

M + H+ + e- = MRads (_rate v1) (11 MBads + H+ + e

-

= M + H2 (rate v2

1

C2l

MHads + MHads = 2M + H2 Crate v3)_ (3)

Tne analogous bromine evolution reaction at vitreous carbon electrodes in acetonitrile h.as also Been studied in tEris laboratory and the results have been analysed by the metnods given in th.is paper.7

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-The h.e.r. is perhaps the most widely studied electrochemical reaction.

Although tn.e a.c. impedance method Etas oeen used to study the upd of hydrogen on platinums,9,lO,ll, tflere are surprisingly few impedance studies of the h.e.r. in

the overpotential region. Gerisc6.e r and Men.15 made impedance studies of the h.e.r. at

mercury, silver and copper electrodes out tEte theoretical treatment presented there

appl ies only to tne Tafel region. Tfi.is restriction means ta.a t the important potential

region in wn.i ch the surface coverage by tlie electroactive intermediate

is changing appreciaBly witfi. potential could not be considered. Also,

the experimental results were not fitted oy the theoretical model they proposed.

Brug et al.6 made a detailed experimental study of t□.e h.e.r. at Au which showed

no evidence of an adsorption capaci.tance associated witb. H and gave a theoretical treatment for several limiting cases. This paper was tn.e first to treat theoret­

ically the impedance in U1.e potential regiAn wn.ere tn.e coverage e is changing.

Oto.er experimenta 1 impedance studies of the h .. e. r. have Been reported by

Armstrong and Bell 1 2, Breiter Knorr and Volklll, Durand13, Frumkin et a1 14 and

Sluyters-Reh5ach and Sluyters 15, as discussed in more detail in Part II. However, •

th.ese papers do not contain any furtb.er theoretical development relevant to the

pres en t wor15.... r, A sen . es o f papers o y E pe 1 b om " an d co-war k ers l fi-· l g concern, ng

experimental and theoretical aspects of the dissolution of the iron electrode

is relevant insofar as one of tb.e mechanisms discussed is similar to eqns. (_l }

and ( 2), out a recombination reacti.on was not considered. Hie theory here is

extended to tELe case of two adsorbed intermediates in Part

rrr

20 wnere it is applied to tne h.e.r. at Ni-Mo-Cd alloys inYol_vi:ng s:orb.ed as well as adsorhed H.

THEORETICAL TREATMENT AND DISCUSSION

1. General Derivation and Equivalent Circuits

In th.is section we derive equivalent circuits for any mechanism with one

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rate 4 rate

--2 -1) limiting. In the following equations, �o = i/F is the net rate (in mol cm s of production (r0 positive) or consumption (r0 negative) of electrons, r1 =

( q1/F)(de/dt) the net rate of production of the adsorbed species, e is the fractional surface coverage of the adsorbed intermediate and q1 is the charge required for deposition of the ad-species to complete coverage. The international sign convent"ion is used, i.e. cathodic currents are taken as negative.

The rates of production of electrons or adsorbed intermediate have contri-butions from several steps in the mechanism. For example, for the h.e.r. proceeding with tELe median ism represented by eqns. C_l) - (3), r0 and r-1 are given by eqns.

(23) and (241, developed later.

Wflen there is sinusoidal modulation of potenttal at frequency w/2rr:* E = Ess + Eac cos(jwt +

e = 8ss + 8ac cos(jwt + i = ;ss + 1ac cos (jwt + SE) = ee) = e.)

,

= Ess + . ..,, . ReIEexp(jwt)J 8ss + Refeexp(jwt)] 1ss + Re(f exp(jwtJ] (41 (5)_ (61

Equation (4f gives the applied potential, consisting of the d.c. or steady­ state (ss) potential Ess and tfie small amplitude sinusoidal component of

magnitude Eac and phase eE.

f

= Eacexp(jeEl is the complex quantity cb.aracterising the a.c. component. Botft e (_eqn. (_5)) and i (eqn. (6)J will also vary sinusoidally

"' ""

but with different pnase and amplitude (contained in i and e). For small perturbation from the steady-state, the rates may be expanded in Taylor series form, neglecting second and higlier order terms Ceqns. (_7} and (8) ):

* These equations, and those following up to (15b)_ are related to tb.ose in Armstrong Is treatment2 but they are written here Ci n a genera 1 ized form witft

somewhat dtfferent notation) in order tliat tb.e subsequent analysis and conslusions given in tn.i s paper regarding equiv a 1 ent circuits may be conveniently foll owed.

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15

-In tne limit of zero frequency, Gae becomes C¢ and tne second (relaxation) term of eqn. (22) becomes l/R0. R0 is therefore associated with relaxation of coverage and is tlie energy-dissipating element associated witfl: this process This discussion indicates tft.e significance of the sign of B (_eqn. 9b}, which is the same as tlie sign of the relaxation term: B is negative if a small increase in tne magnitude of the ove·rpotentia l (wnetfier catnodic or anodic} leads to

relaxation·associated witfi a current that is opposite to that flowing Before the change.

Civ} Inductances

The inductances Ls and LP have a similar significance to Gp, i.e. they are ideal components which arise in combinati:on with resistors (_R0 or RL) in order to model the pn.ase delay of tne coverage rel axa ti on, wn.i ch is not 90 °. When tne current in an inductor changes, an opposing induced emf is set up. Conversely, we consider a negative inductor as a circuf:t element in which the induced emf is in the same direction as the current change, With this in mind, a correspondence is expected between the terms of eqn. (_22) and the parts of the series-inductive circuit, Fig. le. Thus, the first term, 1/R , is one parallel arm of the circuit 00

and is associ'ated with the cliarge""'.transfer part of the current response which

occurs without change in e. Tn.e second term, containing the a.c. pseudocapacitance, is the RsLs arm of the circuit and is associated with tne additional part of the current response which. occurs as e changes. This sfiows why, for negative B, toe inductive equivalent circuit is a 11natural I I one, i. e.-J._ has positive elements: it

is in this case tBat thee relaxation current response opposes that due to charge transfer at constant coverage. This circuit is to be preferred even in the case of positive B, where the inductance is ne.gative, Because similar mechanistic significance can be assigned to its elements, even though th.e circuit cannot be

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-In cases where H recombination is unimportant ands= 0,5, the maxima of C

cp and -r are at tne same potential {eqn. (27)), as may be readily shown by differ­

entiation. The hi.gher the potential of this peak, tl'i.e smaller is K1, the equilibrium constant for the first step:

RT

n.-r,max = Tlccj,,max = F ln [(kl + k2}/(k_ l + k_21] (27) Finally, we remark that although B was allowed to be positive i'n the theoretical section above, a set of rate constants for the h.e.r. could not be found that leads to positive Bin our simulations, nor nave we found an example in the experimental study of tfte li.e.r. at Pt (Part II).

CONCLUSIONS

The theoretical representation of the impedance. of a multi-step mecnanism witn a single adsorbate, in the a5sence of diffus,�on control, can 5e made in terms of four possible equivalent circuits. Although there is no a priori reason for preferring one over another for the purposes of data analysis, it is convenient to be able to attach some medianistic significance to the elements of tEte circuit chosen. It is sn.own th.at the usual "interpretation of t!ie elements of the

capacitative circuit, Fig. la, is incorrect: tErns it is not possible to associate individual steps of the reaction mechanism with individual resistances in this circuit, nor does tEte capacitance (CP)_ correspond with tne steady-state adsorption pseudocapacitance (_C). However, in the special case of underpotential adsorption, the resistance and capacitance of tfie circuit of Fig. 4 do, in fact, have tfi.eir usual significance.

The equivalent circuit wliose elements are most readily given mecEtanistic significance is tfte inductive circuit of Fig. lo. TEte three parallel arms of this circutt correspond to tfie two terms of the Faradaic admittance and the admittance associated with the double-layer capacitance. TEte arm containing R ro

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References (cont'd)

12. R.D. Armstrong and M.F. Bell, Electrochim. Acta., 23, 1111(1978),

13. R. Durand, Electrochim. Acta, 24, 1095{_1979).

14. A. Frumkin, P. Dolin and B. Ersft.le.r, Acta Physicocnim"ica; ]1, 793(1940). 15. M. Sluyters-Rehbach and J.H. Sluyters, Rec. Trav. Chim. P.B. 83, 582(1964).

16. I. Epelboin and M. Keddam, J, Electrocnem. Soc., 117, 1052(1972).

17. I. Eppel E>0in, M. Keddam and J.C. Les trade, Faraday Discussions, 56, 264(1973). 18. M. Keddam, 0.R. Mattos and H. Take.nouti, J. El ectrochem. Soc., 128, 257{_1981). 19. M. Keddam, 0.R. Mattos and H. Tak.enouti, J. Electrochem. Soc,, 128, 266 (1981) , 20. L. Bai and B.E. Conway, Part III of this series, Electrocb.im, Acta, in course

of publication.

21. A.N. Frumkin, Zeit. Pliysik., 35, 792(1926).

22. B.E. Cahan and C.T. CEten, J. Electrocb.em. Soc., 129., 700(J982}.

23. E. Gileadi and B. E. Conway, Can. J. Co.em., 42, O(J964).

24. A. Euck.en and B. W-eblus, Zeit. Elek.trochem., _§_§_, ll4(J951).

25. B.E. Conway and E. Gileadi, Trans. Faraday Soc., 58, 2493(1962)_.

26. E. Gileadi. and B.E. Conway, J. en.em. Pn_ys., 39., 3420(J963).

27. D. Gilroy, M.A. Sattar and B.E. Conway, ElectrocEtim. Acta,

li,

7ll(J969),

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