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Spectroscopic analysis of erbium-doped silicon and ytterbium-doped indium
phosphide
de Maat-Gersdorf, I.
Publication date
2001
Link to publication
Citation for published version (APA):
de Maat-Gersdorf, I. (2001). Spectroscopic analysis of erbium-doped silicon and
ytterbium-doped indium phosphide.
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Listt of papers
D.. van der Voort, I. de Maat-Gersdorf and G. Blasse, European Journal of Solid State Inorganicc Chemistry 29 (1992) 1029.
T.. Gregorkiewicz, B.J. Heijmink Liesert, I. Tsimperidis, I. de Maat-Gersdorf, C.A.J. Ammerlaan,, M. Godlewski and F. Scholz, Rare-Earth Doped Semiconductors (Materials Researchh Society, Pittsburgh, 1993) p. 239.
I.. de Maat-Gersdorf, T. Gregorkiewicz and C.A.J. Ammerlaan, Materials Science Forum
143-1477 (1994) 755.
I.. de Maat-Gersdorf, T. Gregorkiewicz and C.A.J. Ammerlaan, Journal of Luminescence
60&611 (1994) 556.
I.. de Maat-Gersdorf, T. Gregorkiewicz, C.A.J. Ammerlaan and N.A. Sobolev, Semiconductor Sciencee and Technology 10 (1995) 666.
I.. de Maat-Gersdorf, T. Gregorkiewicz, C.A.J. Ammerlaan, P.C.M. Cristianen and J.C. Maan, Rare-Earthh Doped Semiconductors II (Materials Research Society, Pittsburgh, 1996) p. 161.
C.AJ.. Ammerlaan and I. de Maat-Gersdorf, Trends in Materials Science and Technology (Hanoii National University Publishing House, Hanoi, 1999) p. 22.
C.A.J.. Ammerlaan and I. de Maat-Gersdorf, Physics of Semiconductor Devices (Allied Publisherss Ltd, New Delhi, 2000) p. 119.
C.AJ.. Ammerlaan and I. de Maat-Gersdorf, Applied Magnetic Resonance, accepted for publication. .