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Measuring the electron density in an Extreme Ultra-Violet

generated plasma

Citation for published version (APA):

Horst, van der, R. M., Nijdam, S., & Kroesen, G. M. W. (2013). Measuring the electron density in an Extreme Ultra-Violet generated plasma. 1-1. Poster session presented at 25th NNV Symposium on Plasma Physics and Radiation Technology, March 5-6, 2013, Lunteren, The Netherlands, Lunteren, Netherlands.

Document status and date: Published: 01/01/2013

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Accepted manuscript including changes made at the peer-review stage

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(2)

Measuring the electron density in

an Extreme Ultra-Violet generated

plasma

25th NNV-symposium on Plasma Physics and Radiation Technology.

Lunteren, The Netherlands on March 5-6, 2013.

/ Department of Applied Physics, EPG

R.M. van der Horst, S. Nijdam and G.M.W. Kroesen

Elementary Processes in Gas discharges

r.m.v.d.horst@tue.nl

Introduction

Industries are continuously striving to reduce the size of computer chips in order to meet the demand of increasing computer speed and memory capacity. One way to miniaturize the chips is by reducing the wavelength used in lithography machines by using Extreme Ultra-Vio-let (EUV, 92 eV) light. Background gas in the lithography machine is partially ionized by the absorption of EUV photons. The study of this small low-density (1015 m-3) pulsed plasma is experimentally

challeng-ing.

Goal

Determine the temporally resolved electron density in an EUV gener-ated plasma.

EUV plasma parameters

Short (sub-μs) EUV pulse

EUV transparent gasses (e.g. H2 and He)

Pressures < 1Pa

Low electron density (1015 m-3)

A DC discharge is used as a simulation plasma to test the diag-nostics

Microwave cavity resonance spectroscopy

Measurement principle and set-up

Results of DC discharge in DC cavity

Accuracy of frequency shift: 100 kHz

ƒ

Detection limit: ne=1014 m-3

Shift observed due to plasma

ƒ

Lower response

Preliminary spectrum EUV cavity

Accuracy of frequency shift: <20 kHz

ƒ

Detection limit: ne<3 . 1013 m-3

Response time: 15 ns

Resonance frequencies correspond to theoretical values n m f e f f e = e ′ 8 2 0 2 2 0 π φ ε ∆ frequency cavity r esponce f0 ∆f f’ plasma off plasma on –HV microwave generator detector cavity 10 kΩ 6 MΩ antenna plasma isolation 2.660 2.67 2.68 2.69 2.70 2.71 2.72 2.73 2.74 0.05 0.1 0.15 0.2 0.25 0.3 0.35 frequency (GHz) cavity response (mW) no plasma 50 Pa, 2 kV 50 Pa, 3 kV 50 Pa, 4 kV 100 Pa, 3 kV

pressure voltage density 50 Pa 2 kV 1.8∙1015 m-3 50 Pa 3 kV 2.2∙1015 m-3 50 Pa 4 kV 2.3∙1015 m-3 100 Pa 3 kV 5.8∙1015 m-3 antenna cavity EUV beam 3 3.5 4 4.5 5 5.5 6 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 frequency (GHz) power (mW) TM010 TM110 f0 = 3.48 GHz σf = 21 MHz Q = f0/σf = 166 τ = 1/(π σf) = 15 ns

Mode Theory Experiment TM010 3.477 GHz 3.482 GHz TM110 5.54 GHz 5.49 GHz

Microwave scattering

Oscillating dipole moment in plasma due to MW [1]

Scattered power has maximum @ fp

As a first test: determine

impedance of the test plasma [2]

ƒ

Dip in reflectivity @ a.fp, a<0

ƒ

Peak in impedance @ fp

Neither are observed

z, E y, k x, B MW transmitting horn MW receiving horn scattered light plasma frequency scatter ed power fp HV– 2 cm 10 k Ω 6 MΩ network analyzer

Conclusion and Outlook

No plasma effects visible in plasma scattering measurements

ƒ

Improve set-up to suppress non-plasma related effects

MCRS proved to be able to measure 1014 m-3 in a small plasma

ƒ

Characterize EUV cavity

ƒ

Measure electron density in EUV generated plasma

Acknowledgements

The authors would like to thank Lex van Deursen for his help with the impedance measurements.

References

[1] Z. Zhang, IEEE Trans. Plasma. Sci. 39:593-595 (2011)

[2] W.E. Amatucci, D.N. Walker, D.D. Blackwell, Navel Research Lab-oratory, NRL/MR/6750-04-8811 (2004)

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