Plasma-enhanced atomic layer deposition of tungsten oxide
thin films using (tBuN)2(Me2N)2W and O2 plasma
Citation for published version (APA):
Balasubramanyam, S., Sharma, A., Vandalon, V., Knoops, H. C. M., Kessels, W. M. M., & Bol, A. A. (2018). Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 36(1), [01B103].
https://doi.org/10.1116/1.4986202
DOI:
10.1116/1.4986202
Document status and date: Published: 13/01/2018 Document Version:
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Supporting Information
Plasma enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
Shashank Balasubramanyam1, a), Akhil Sharma1, H.C.M.Knoops1,2, Vincent
Vandalon1, W.M.M. (Erwin) Kessels1, Ageeth A.Bol1
1Department of Applied Physics, Eindhoven University of Technology, P.O Box 513, 5600 MB
Eindhoven, The Netherlands.
2Oxford Instruments Plasma Technology North end, Bristol, BS49 4AP, United Kingdom
Table S1 shows the actual substrate temperatures and the deposition temperatures (commonly referred to as table temperature). The actual substrate temperature was determined from in-situ spectroscopic ellipsometry and thermocouple measurements on c-Si substrates positioned on the table. Both these methods gave identical temperature values. The temperature difference observed between the deposition temperature and actual substrate temperature might be due to poor thermal contact between the table and the c-Si substrate within the vacuum conditions of the ALD deposition chamber. Throughout this report, the deposition temperatures are used for discussion unless otherwise specified.
Table S1. Actual substrate (c-Si with native oxide) temperature vs deposition temperature (table temperature).
Deposition temperature (°C) Actual substrate temperature (°C)
100 91±5
200 164
300 215
350 245
FIG. S1. Atomic force microscope (AFM) images of ~20 nm thick WO3 films deposited at (a)
100 °C, (b) 350 °C, and (c) 400 °C, respectively over a scan area of 1000 nm ×1000nm. The root mean square (rms) surface roughness values at 100 °C, 350°C, and 400 °C were 0.1 nm, 0.3 nm, and 0.5 nm, respectively. AFM images of films deposited at 200°C and 300°C (not shown) exhibited no features and had rms surface roughness similar to the films deposited at 100 °C (Fig a).
