Name of conference/workshop: Physics@Veldhoven 2019
Date: 22-23 January 2018
Location: Koningshof, Veldhoven
Type of contribution: Poster presentation
Presenter: O. Soroka
Comparison of hydrogen transport through thin metal, Si and oxide layers O. Soroka, J.M. Sturm, F. Bijkerk
XUV Optics group, MESA+ Institute for Nanotechnology, University of Twente, 7500 AE, Enschede, the Netherlands
Abstract
Hydrogen radicals can cause fracture and damage of bulk materials and thin films due to their high diffusivity in these systems. In order to find protective layers that can block H diffusion, the hydrogen transport through thin layers should be measured. A thin yttrium film proved to be an effective sensor for atomic hydrogen. It enables the comparison of hydrogen transport through different materials by coating a Y film with a thin layer of a material of interest. A protective Pd thin layer should be added on top of the structure to increase the adsorption of hydrogen on the surface and to mitigate the influence of contamination. Using such a Pd/Ma/Y structure, where material Ma = Ru, Mo, Cu, Ag, Si, SiO2, Al2O3, the time of
hydrogen transport through the Ma layer was measured and a qualitative comparison of hydrogen dynamics in different materials was made.
