UvA-DARE is a service provided by the library of the University of Amsterdam (https://dare.uva.nl)
UvA-DARE (Digital Academic Repository)
Light in strongly scattering semiconductors - diffuse transport and Anderson
localization
Gomez Rivas, J.
Publication date
2002
Link to publication
Citation for published version (APA):
Gomez Rivas, J. (2002). Light in strongly scattering semiconductors - diffuse transport and
Anderson localization.
General rights
It is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an open content license (like Creative Commons).
Disclaimer/Complaints regulations
If you believe that digital publication of certain material infringes any of your rights or (privacy) interests, please let the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the material inaccessible and/or remove it from the website. Please Ask the Library: https://uba.uva.nl/en/contact, or a letter to: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. You will be contacted as soon as possible.
Contents s
11 Introduction 9
1.11 Single scattering 9
1.22 Multiple scattering 10
1.33 Weak localization 12
1.44 Anderson localization 15
1.55 The history of localization 19
1.66 How to localize light 21
1.77 This thesis 22
22 Propagation of light in disordered scattering media 25
2.11 Coherent beam 25
2.22 Diffusive propagation 27
2.2.11 The radiative-transfer equation and the diffusion
approxi-mationn 27
2.2.22 Boundary conditions: internal reflection 28
2.2.33 Angular-resolved transmission 32
2.2.44 Total transmission and reflection 33
2.2.55 Dynamic transmission 37
2.33 Enhanced backscattering 38
2.44 Anderson localization 42
33 Near infrared transmission through powdered samples 47
3.11 Introduction 47
3.22 Sample preparation 49
3.33 Experimental set-up 51
3.44 Total transmission through Si samples 52
3.55 Total transmission through Ge samples 55
3.66 Discussion 59
88 CONTENTS 44 Midinfrared transport of light in Ge powders close to the localization
transitionn 61
4.11 Introduction 61 4.22 Sample preparation 63 4.33 Static measurements 65
4.3.11 Coherent beam transmission 65 4.3.22 Total transmission and reflection 67
4.3.33 Discussion 72 4.44 Time-resolved speckle interferometry 73
4.55 Photoacoustic spectroscopy 77
55 Porous GaP: formation and optical properties 81
5.11 Introduction 81 5.22 Optical experimental techniques 83
5.33 Pore formation by anodic etching 84 5.3.11 Current-potential characteristics 85 5.3.22 Formation of porous layers 87 5.44 Optical absorption in anodically-etched GaP 90
5.55 Removal of the top layer by photochemical
etchingg 91 5.66 Scattering strength versus doping concentration and etching potential 94
5.77 Increase of the scattering strength by chemical etching 98
5.88 Discussion 101
Appendixx A: energy density coherent potential approximation. 105 Appendixx B: extrapolation length with an absorbing layer. 107
Listt of symbols 109 Listt of abbreviations 113 Referencess 115 Summaryy 125 Samenvattingg 129 Resumenn 133 Dankwoordd 137
