Integrated amplifiers and lasers in Al2O3:Er3+ thin films on a silicon chip M. Pollnau, J.D.B. Bradley, E.H. Bernhardi, F. Ay, R.M. de Ridder, and K. Wörhoff
Integrated Optical MicroSystems Group, MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
Thin layers of Al2O3:Er3+ were reactively co-sputtered onto thermally oxidized silicon
wafers and microstructured by reactive ion etching. Channel waveguides with losses of 0.3 dB/cm at 1.5 µm were obtained. Internal net optical gain was achieved over a bandwidth of 80 nm (1500-1580 nm), with a peak gain of 2.0 dB/cm at 1533 nm. 170 Gbit/s data amplification was demonstrated with open eye diagrams. Integrated channel waveguide ring lasers were realized with output powers of up to 9.5 µW, slope efficiencies of up to 0.11%, and a threshold power as low as 6.4 mW, with wavelength selection in the range 1530 to 1557 nm. Distributed-phase-shift holographically written surface relief Bragg gratings were integrated via reactive ion etching of SiO2 overlay
