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University of Groningen

Characterization and device physics of polymer semiconducting devices with metal oxide

contacts

de Bruyn, Paul

IMPORTANT NOTE: You are advised to consult the publisher's version (publisher's PDF) if you wish to cite from

it. Please check the document version below.

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Publication date:

2018

Link to publication in University of Groningen/UMCG research database

Citation for published version (APA):

de Bruyn, P. (2018). Characterization and device physics of polymer semiconducting devices with metal

oxide contacts. University of Groningen.

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Stellingen

behorende bij het proefschrift

Characterization and device physics of polymer semiconducting

devices with metal oxide contacts

door Paul de Bruyn

1. The performance of inverted solar cells with an ITO/ZnO cathode, fabricated through the low temperature decomposition of Zn(acac)2, is equivalent to cells

made in the conventional bottom anode, top cathode geometry (chapter 2). 2. A short, low temperature annealing step of Zn(acac)2 under ambient conditions is

sufficient to produce electrically well-performing ZnO electron transport layers in organic semiconductor devices (chapter 3).

3. All-solution processed polymer light-emitting diodes with two ohmic contacts can be fabricated with enhanced air stability by employing metal oxide transport layers (chapter 4).

4. Dispersions of PEDOT:PSS can be modified by addition of Dimethylaminoethanol to increase the pH value and these dispersions can then be used in the charge recombination layer together with ZnO to create organic tandem solar cells (chapter 5).

5. The diffusion current in organic metal-insulator-metal diodes with one ohmic and one non-ohmic contact can be analytically modeled by adapting the classical diffusion current derivations to the appropriate boundary conditions (chapter 6). 6. By deriving equations for the influence of the Gaussian density of states of

organic semiconductors on barrier lowering, the injection-limited current from a non-ohmic contact in organic metal-insulator-metal diodes can be analytically derived (chapter 7).

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